We demonstrate an electric-controlled terahertz(THz) modulator which can be used to realize amplitude modulation of terahertz waves with slight photo-doping. The THz pulse transmission was efficiently modulated by electrically controlling the monolayer silicon-based device. The modulation depth reached 100% almost when the applied voltage was 7V at an external laser intensity of 0.6W/cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave(CW)system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized. The THz pulse modulation was efficiently modulated by controlling the monolayer silicon-based device. The modulation depth reached 100 % almost when the applied voltage was 7V at an external laser intensity of 0.6W / cm2. The saturation voltage reduced with the increase of the photo-excited intensity. In a THz continuous wave (CW) system, a significant fall in both THz transmission and reflection was also observed with the increase of applied voltage. This reduction in the THz transmission and reflection was induced by the absorption for electron injection. The results show that a high-efficiency and high modulation depth broadband electric-controlled terahertz modulator in a pure Si structure has been realized.