液相外延法生长的PbTe-PbSbTe异质结外延层的失配位错已经用腐蚀坑法进行了研究。沿〈100〉方向平行于异质结的失配位错线密度与予期的值很符合。这表明由于PbTe-PbSnTe之间的晶格失配引起的应变因引入失配位错而完全消除。从腐蚀坑的分布,电子探针分析和计算表明,在外延生长时失配位错分布在由锡自扩散所决定的区域中的异质结附近。 Misfit dislocations in PbTe-PbSbTe heterostructure epitaxial layers grown by liquid-phase epitaxy have been studied by the pit-etch method. The misfit dislocation linear density parallel to the heterojunction along the <100> direction is in good agreement with the expected value. This shows that the strain due to the lattice mismatch between PbTe-PbSnTe is completely eliminated by the introduction of misfit dislocations. From the distribution of corrosion pits, electron probe analysis and calculation show that misfit dislocations are distributed near the heterojunction in the region determined by the self-diffusion of tin during epitaxial growth.