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InAs quantum dots (QDs) grown on InxGa1-xAs/InP matrix by low pressure metal organic vapor phase epitaxy (LP-MOVPE) in nitrogen ambient were studied. Formation of the InAs QDs with different growth conditions was investigated. To improve the dot size uniformity, a two-step growth method was used and investigated. It is found that morphology of the InAs QDs formed on such InxGa1-xAs/InP matrix is very sensitive to the growth conditions. InAs QDs with high density of 1.3×1010 cm?2 are grown by using S-K growth method with fast growth rate. Using the two-step growth method, the InAs QDs size uniformity improves by 63% and 110% compared that of the dots grown by ordinary S-K method and ALE method, respectively. Narrow photoluminescence (PL) emission spectrum of the QDs grown by using the two-step growth method is received. FWHM of the PL curve is measured at 26 meV and the peak emission wavelength is larger than 2.3 μm at 77 K.
InAs quantum dots (QDs) grown on InxGa1-xAs / InP matrix by low pressure metal organic vapor phase epitaxy (LP-MOVPE) in nitrogen ambient were investigated. Formation of the InAs QDs with different growth conditions was investigated. uniformity, a two-step growth method was used and investigated. It is found that morphology of the InAs QDs formed on such InxGa1-xAs / InP matrix is very sensitive to the growth conditions. InAs QDs with high density of 1.3 × 1010 cm? 2 are grown by using SK growth method with fast growth rate. Using the two-step growth method, the InAs QDs size uniformity improves by 63% and 110% compared that of the dots grown by ordinary SK method and ALE method, respectively. Narrow The FWHM of the PL curve is measured at 26 meV and the peak emission wavelength is larger than 2.3 μm at 77 K. The photoluminescence (PL) emission spectrum of the QDs grown by using the two-