通过在有机发光二极管(OLED)的阳极与空穴传输层NPB之间加入m-MTDATA作为缓冲层来研究缓冲层对器件性能的影响。制备了ITO/m-MTDATA(dnm)/NPB(40-dnm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)、ITO/MoO3(15nm)/NPB(25nm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)结构的器件,研究不同m-MTDATA厚度对OLED发光亮度、电流密度、电流效率等性能的影响。实验发现,当缓冲层的厚度为15nm时,器件的启亮电压从未加缓冲层的13V降到了9V,最大发光亮度从未加缓冲层的5900cd/m2增加到16300cd/m2,是原来的2.76倍。最高的电流效率也由未加缓冲层的1.8cd/A变为3.5cd/A,是原来的1.94倍。然后在器件的氧化铟锡(ITO)与NPB之间插入了厚度为15nm的MoO3缓冲层。与同厚度的m-MTDATA器件相比,插入MoO3缓冲层器件的启亮电压降低为8V,最大亮度为13320cd/m2,最大电流密度为6030.74A/m2,最大的电流效率为3.06cd/A。 The impact of the buffer layer on device performance was investigated by adding m-MTDATA as the buffer layer between the anode of the organic light emitting diode (OLED) and the hole transport layer NPB. ITO / m-MTDATA (dnm) / NPB (40-dnm) / Alq3 (70nm) / LiF (0.5nm) / Al (40nm), ITO / MoO3 (15nm) / NPB (25nm) / Alq3 /LiF(0.5nm)/Al(40nm) structure of the device, to study the thickness of the m-MTDATA OLED brightness, current density, current efficiency and other performance. The experimental results show that when the thickness of the buffer layer is 15nm, the turn-on voltage of the device is reduced from 13V without buffer to 9V, and the maximum luminance increases from 5900cd / m2 without buffer to 16300cd / m2 with the original 2.76 Times The highest current efficiency from unbuffered 1.8cd / A to 3.5cd / A, is 1.94 times the original. A MoO3 buffer layer with a thickness of 15 nm was then inserted between the indium tin oxide (ITO) and the NPB of the device. Compared with the m-MTDATA device with the same thickness, the startup voltage of the MoO3 buffer layer device is reduced to 8V, the maximum brightness is 13320cd / m2, the maximum current density is 6030.74A / m2 and the maximum current efficiency is 3.06cd / A.