A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique.The reliability issues (I-V characteristics,capacitance retention,fatigue and imprint) were investigated.The I-V curve showed the conventional Schottky diode characteristics with a small current density of -5.3×10-10 A/cm2 at a voltage of -4 V and 6.7×10-8 A/cm2 at a voltage of + 4 V,and this characteristic can be maintained below 50℃.The capacitance variety of the ferroelectric diode was only 5% in 10 hours after withdrawing the applied bias of +5 V or -5 V,indicating the diode had good capacitance retention.By applying 100 kHz bipolar pulses of 5 V amplitude,the decay in remanent polarization was only 10% after 109 switching cycles,and meanwhile the increase in coercive field was 12%.After being irradiated for 20 min with a 200 W ultraviolet ray lamp,the remanent polarization and coercive field had both varied,and a voltage shift was observed,but the figure of merit FOM was about 0.2 and the diode had no imprint invalidation.``