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一、引言 肖特基势垒二极管自六十年代初问世以来,随着半导体材料和器件工艺的发展,性能有很大提高,在微波混频和检波器中得到广泛应用。混频二极管目前正向低噪声、宽频带和毫米波方向发展。由于电子迁移率比空穴迁移率大得多,所以总是用n型半导体材料来制作混频或检波二极管。n型GaAs材料的电子迁移率比硅高得多,所以它适宜于制作毫米波器件,可以获得较高的截止频率和较低的噪声系数。但是,砷化镓材料和器件工艺以及可靠性方面均不如硅器件成熟。所以,目前仍有不少毫米波肖特基势垒混频二极管产品是用硅材料制作的。与砷化镓相比,金属—硅势垒的势垒高度较低,通常不需要加偏压或加大本振功率。所以,采用硅材料对于使用来讲也是有利的。
I. INTRODUCTION Since the advent of Schottky barrier diodes since the early 1960s, with the development of semiconductor materials and device technology, performance has greatly improved, and is widely used in microwave mixing and geophones. Mixing diodes are now moving toward low noise, broadband and millimeter-wave directions. Since the electron mobility is much greater than the hole mobility, n-type semiconductor materials are always used to make mixing or detector diodes. The n-type GaAs material has a much higher electron mobility than silicon, making it suitable for millimeter-wave devices with higher cutoff frequency and lower noise figure. However, gallium arsenide materials and device processes and reliability are not as mature as silicon devices. Therefore, there are still many millimeter-wave Schottky barrier hybrid diode products are made of silicon materials. Metal-silicon barriers have lower barrier heights compared to gallium arsenide, which typically do not require bias or boost the LO power. Therefore, the use of silicon material is also beneficial for use.