研究了Ａｒ离子激光器与硅各向异性腐蚀技术相结合制造硅杯的方法。结果表明，激光照射能增强浸于ＫＯＨ溶液中硅的化学腐蚀速率，在入射光强为４．６Ｗ，ＫＯＨ溶液浓度为０．２２ｍｏｌ，温度为９０℃的条件下，得到＜１００＞硅的腐蚀速率为２１μｍ／ｍｉｎ，是无激光照射时硅各向异性腐蚀速率的多倍。进而讨论了硅在ＫＯＨ溶液中腐蚀速率对激光光强的依赖关系以及实验温度对腐蚀速率的影响问题。 A method of manufacturing a silicon cup by combining an Ar ion laser with an anisotropic silicon etching technique is studied. The results show that laser irradiation can enhance the chemical corrosion rate of silicon immersed in KOH solution. Under the conditions of incident light intensity of 4.6W, KOH solution concentration of 0.22mol and temperature of 90 ℃, the corrosion of <100> silicon is obtained The rate of 21μm / min is the multiple of the anisotropic silicon anisotropy rate in the absence of laser irradiation. Furthermore, the dependence of silicon etching rate in KOH solution on the laser intensity and the influence of experimental temperature on corrosion rate are discussed.