自七十年代以来,国际上已用门阵列设计方法研制出多种CMOS IC产品。但是,由于当时采用人工布线方法,设计效率不高,所以CMOS门阵列技术开发缓慢。直到八十年代初期,随着CMOS门阵列宏单元库的建立及CAD软件的开发,才使这一技术风靡世界各大电子公司。目前,国外已研制出沟道长度为1μm、门级延迟1ns、上万门的超高速硅栅CMOS门阵列器件。近几年来,我国也有一些单位开展了这方面的研究工作。本文介绍我们开发的CMOS门阵列技术中 Since the 1970s, a variety of CMOS IC products have been developed internationally using gate array design methods. However, due to the artificial wiring method was used at that time, the design efficiency was not high, so CMOS gate array technology was developed slowly. Until the early eighties, with the establishment of the CMOS gate array macro cell library and the development of CAD software, this technology swept the world’s major electronics companies. At present, foreign countries have developed a channel length of 1μm, gate-level delay 1ns, thousands of gates of ultra-high-speed silicon gate CMOS gate array devices. In recent years, some units in our country have conducted research in this area. This article describes the CMOS gate array technology we developed