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通过实验测量和理论分析,从载流子动力学角度研究了用于脉冲辐射探测的CVD金刚石薄膜探测器的适用结构、电荷收集效率和时间响应性能.结果表明,CVD金刚石薄膜可以制成均匀型结构的探测器;薄膜中的缺陷会降低探测器的电荷收集效率,探测器的电荷收集效率随场强增大而增大直至饱和.已研制的CVD金刚石探测器电荷收集时间可达719ps,在2.5V/μm场强下达到饱和,电荷收集效率达60.5%;晶格散射是影响探测器时间响应的主要因素,选用大晶粒甚至单晶金刚石薄膜可以提高探测器时间响应.
The structure, charge collection efficiency and time response of CVD diamond film detector for pulse radiation detection were studied from the point of view of carrier dynamics through experimental measurement and theoretical analysis. The results show that CVD diamond film can be made into uniform Structure of the detector; defects in the film will reduce the detector’s charge collection efficiency, detector charge collection efficiency increases with increasing field strength until saturation. CVD diamond detector has been developed charge collection time up to 719ps, in the At 2.5V / μm field strength, the charge collection efficiency reaches 60.5%. Lattice scattering is the main factor affecting the time response of the detector. Selecting large grains or even single crystal diamond films can improve the detector time response.