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用射频磁控溅射法在Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ（１００）结构衬底上沉积了高度Ｃ轴取向Ｌａ改性的ＰｂＴｉＯ３（ＰＬＴ１５）薄膜．研究了ＰＬＴ１５薄膜的电晕极化方法，用此方法同时对多个热释电敏感单元进行了极化．利用ＰＬＴ１５薄膜制备了热释电红外传感器，薄膜厚度是２μｍ，真空蒸发的Ｎｉ－Ｃｒ电极面积为１．２ｍｍ×１．０ｍｍ，敏感元下的Ｓｉ（１００）基片用热ＫＯＨ和ＥＰＷ进行刻蚀．用所设计的热释电系数测试系统对ＰＬＴ１５薄膜样品进行了测试，研究了其热释电特性．测试结果表明，ＰＬＴ１５薄膜样品的热释电电流ｉｐ平均为２．１×１０－１１Ａ，而对应的热释电系数ｐ为２．５２×１０－８Ｃ·（ｃｍ２·Ｋ）－１．这类薄膜很适合制备红外传感器
A highly C-axis oriented La-modified PbTiO3 (PLT15) thin film was deposited on a Pt / Ti / SiO2 / Si (100) substrate by RF magnetron sputtering. The corona polarization method of PLT15 thin film was studied, and several pyroelectric sensitive cells were polarized at the same time by this method. A pyroelectric infrared sensor was fabricated by using PLT15 thin film. The thickness of the thin film was 2μm. The area of the Ni-Cr electrode was 1.2mm × 1.0mm. The Si (100) substrate under the sensitive element was engraved with hot KOH and EPW eclipse. The PLT15 thin film samples were tested with the designed pyroelectric coefficient test system, and their pyroelectric properties were studied. The test results show that the average pyroelectric current ip of PLT15 thin film samples is 2.1 × 10-11A, and the corresponding pyroelectric coefficient p is 2.52 × 10-8C · (cm2 · K) -1. This kind of film is very suitable for preparing infrared sensors