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测量了Ｓｉ（１００）（２×１）－Ｈ表面和Ｓｉ（１００）（３×１）－Ｈ表面的反射二次谐波强度随温度的变化关系，并与清洁的Ｓｉ（１００）（２×１）表面进行了比较。Ｓｉ（１００）（２×１）表面和Ｓｉ（１００）（３×１）－Ｈ表面的二次谐波强度随温度的上升而单调地减小，Ｓｉ（１００）（２×１）－Ｈ表面二次谐波强度随温度的变化不是单调的，约在４７０Ｋ时信号最大。可以根据二次谐波信号的强度及其随温度的变化关系来确定样品温度和表面结构。
The relationship between the intensity of the reflected second harmonic at the Si (100) (2 × 1) -H surface and the Si (100) (3 × 1) -H surface with temperature was measured and compared with that of the Si (100) × 1) Surfaces were compared. The second harmonic intensities of Si (100) (2 × 1) and Si (100) (3 × 1) -H surfaces decrease monotonically with the increase of temperature. Si (100) Surface second harmonic intensity changes with temperature is not monotonous, the signal is about 470K maximum. The temperature and surface structure of the sample can be determined according to the intensity of the second harmonic signal and its relationship with temperature.