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建立了一维半导体Ge激光烧蚀模型,对不同功率密度的紫外激光烧蚀半导体Ge的过程进行了模拟,并对计算结果进行了分析,得到激光功率密度对烧蚀过程以及蒸气膨胀动力学特性的影响。结果表明,激光功率密度的变化对烧蚀过程影响非常大。照射的激光功率密度越大,靶的表面温度越高,蒸发深度、烧蚀蒸气温度和膨胀的速度、相应蒸气膨胀的空间尺度也越大,且等离子体屏蔽现象出现得越早。在给定的烧蚀条件下,等离子体屏蔽的阈值在1×108~1.5×108W/cm2之间。
A one-dimensional semiconductor Ge laser ablation model was established to simulate the ablation process of semiconductor Ge with different power density by UV laser. The calculation results were analyzed and the influence of laser power density on ablation process and vapor expansion kinetics Impact. The results show that the laser power density changes have a great impact on the ablation process. The larger the laser power density, the higher the surface temperature of the target, the depth of evaporation, the temperature of the ablation vapor and the rate of expansion, the larger the spatial scale of the corresponding vapor expansion and the earlier the plasma shielding phenomenon appears. Under a given ablation condition, the plasma shielding threshold is between 1 × 10 8 and 1.5 × 10 8 W / cm 2.