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研究了热壁外延CdTe/(111)CdTe薄膜77～200K的光致发光光谱。在77K首次观察到了CdTe的自由激子第一激发态的发光峰1.588eV。热壁外延CdTe薄膜具有很强的自由激子发光峰和微弱的缺陷发光,以及很好的横向均匀性,边缘发光峰的半宽度8.3meV是迄今报道中最窄的。光致发光光谱研究表明,热壁外延CdTe/(111)CdTe薄膜明显优于CdTe体材料。
The photoluminescence spectra of hot-wall epitaxial CdTe / (111) CdTe films at 77 ~ 200K were studied. For the first time at 77K, the emission peak of the first excited state of the free exciton of CdTe is 1.588 eV. Hot-wall epitaxial CdTe films have strong free exciton luminescence peaks and weak defect luminescence with good lateral uniformity. The half-width of the edge luminescence peak at 8.3 meV is the narrowest reported so far. Photoluminescence spectra show that hot-wall epitaxial CdTe / (111) CdTe films are significantly superior to CdTe bulk materials.