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为了提高半导体激光器的光谱纯度、亮度和工作稳定性,对多环耦合结构的半导体激光器进行了研究。采用多环耦合与弯曲有源波导共端输出结构,使得环形结构激光器输出在光谱纯度、亮度和工作稳定性方面得到了大幅改善。器件水平远场发散角度为2.7°,输出功率达10mW,在821nm处的谱线宽度为0.26nm,实现Q因子达2737。该多环耦合结构器件具有电流对光谱调制特性,调制范围接近15nm,同时电流对谱线宽度也有一定的调制作用,调制能力在0.2nm左右。优化后器件输出的谱线宽度变窄,达到0.2nm,实现Q因子达4040。
In order to improve the spectral purity, brightness and work stability of semiconductor lasers, multi-ring coupled semiconductor lasers have been studied. The use of multi-loop coupling and bending active waveguide co-output structure, the ring structure of the laser output spectral purity, brightness and work stability has been greatly improved. The far-field divergence angle of the device is 2.7 °, the output power reaches 10mW, the spectral line width at 821nm is 0.26nm, and the Q factor reaches 2737. The multi-ring coupling structure device has the current-to-spectral modulation characteristics, the modulation range is close to 15nm, and the current has a certain modulation effect on the line width. The modulation capability is about 0.2nm. Optimized the output of the device narrowed the spectral width, reaching 0.2nm, Q factor up to 4040.