论文部分内容阅读
This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide(Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique.The Ta-doped ITO contacts become Ohmic with a specific contact resistance of ～ 5.65 × 10-5.cm 2 and show the transmittance of ～98% at a wavelength of 440 nm when annealed at 500 C.Blue light emitting diodes(LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21 V at an injection current of 20 mA.It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20 mA in comparison with that of LEDs with conventional Ni/Au contacts.
This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. Ta-doped ITO contacts became Ohmic with a specific contact resistance of ~5.65 × 10 -5 cm 2 and show the transmittance of ~ 98% at a wavelength of 440 nm when annealed at 500 C. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21 V at an injection current of 20 mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20 mA in comparison with that of LEDs with conventional Ni / Au contacts.