论文部分内容阅读
随着景深和光刻胶薄膜厚度的不断减小,在未来光刻方案中所用的含硅材料应当提供抗刻蚀的选项。通过增大光刻胶曝光系统的数值孔径(NA),先进的浸没式技术将193nm光学光刻的特征尺寸扩展至45nm及以下,但它
As depth of field and the thickness of the photoresist film continue to decrease, the silicon-containing materials used in future lithography solutions should provide an etch-resistant option. By increasing the numerical aperture (NA) of a photoresist exposure system, advanced immersion techniques extend the feature size of 193 nm optical lithography to 45 nm and below, but it