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采用热蒸镀法,在石英基底上制备了不同化学组分的GexAsySe1-x-y硫系玻璃薄膜,并对其拉曼光谱进行测量,旨在分析化学组分对薄膜内部结构的影响。分析了波数位于100~350 cm-1范围内薄膜拉曼光谱的演变,用高斯曲线对拉曼光谱进行分峰拟合。结果表明,样品在190 cm-1处Ge-Se振动模式随着Ge和As含量的增加而变强;随着平均配位数(MCN)的增加,As-Se振动模式减弱,位于225 cm-1和250 cm-1处的两个拉曼峰逐渐合并,并向高波数区域延伸;在Ge含量高的样品中,170~180 cm-1处的拉曼峰是由薄膜内部键缺陷造成的。
The GexAsySe1-x-y chalcogenide glass thin films with different chemical compositions were prepared on quartz substrates by thermal evaporation. The Raman spectra of the films were measured to analyze the influence of chemical composition on the internal structure of the films. The evolution of the Raman spectrum of the film with the wavenumber in the range of 100-350 cm-1 was analyzed. The Gaussian curve was used to fit the Raman spectra. The results show that the Ge-Se vibration mode at 190 cm-1 becomes stronger with the increase of Ge and As contents. As the average coordination number (MCN) increases, the As-Se vibration mode weakens at 225 cm- The two Raman peaks at 1 and 250 cm-1 gradually merged and extended to the high-wavenumber region. In the samples with high Ge content, Raman peaks at 170-180 cm-1 were caused by internal defects in the film .