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GeSbTe体系是目前最适用于可重写相变光盘记录的材料，本文利用自己研制成功的相变光盘动态测试装置对本所研制的GeSbTe相变光盘进行了光盘动态擦写实验和材料性能研究，并实现了直接重写，取得了较大的进展。实验中发现脉冲擦除比直流擦除有较好的擦除效果和较多的重写次数。
At present, GeSbTe system is the most suitable material for rewritable phase change optical disk recording. In this paper, the GeSbTe phase change optical disk developed by our institute has been used to study the dynamic erasing experiment and material properties of phase change optical disk Achieved a direct rewrite, made great progress. The experiment found that pulse erasing has better erasing effect and more rewriting times than DC erasing.