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对微波单片集成 (简称 MMIC)双栅 MESFET混频器的设计理论和工艺技术进行较为细致的研究。根据双栅 MESFET的理论分析与实验结果 ,建立了一种栅压调制 I- V特性的经验模型 ,推导了双栅 FET混频器变频增益公式。分析了栅压对改变非线性跨导在混频器中的作用。最后设计并加工出了芯片面积为 0 .75 mm× 1 .5 mm Ga As MMIC双栅 FET混频器。
The microwave monolithic integrated (referred to as MMIC) dual-gate MESFET mixer design theory and process technology for more detailed study. According to the theoretical analysis and experimental results of dual-gate MESFET, an empirical model of gate-voltage modulation I-V characteristics is established and the frequency conversion gain formula of dual-gate FET mixer is deduced. The effect of gate voltage on changing the nonlinear transconductance in a mixer is analyzed. Finally, a 0.75 mm × 1.5 mm GaAs MMIC dual-gate FET mixer with a chip area of 0.45mm is designed and fabricated.