据日本《东芝评论》杂志1992年第3期报道,在最近的微波通信中,正采用大容量的数字通信系统,迫切需要小失真、大功率的GaAs FET。为此,日本东芝公司已研制成小失真、大功率C波段30W GaAs功率FET。 这种FET比现有20w FET的性能有进一步提高,在管壳内合成4个采用p型杂质离子注 According to Japan’s “Toshiba Review” magazine in 1992 No. 3 reported that in the recent microwave communications, is using large-capacity digital communications systems, the urgent need for small distortion, high-power GaAs FET. To this end, Toshiba Japan has developed a small distortion, high-power C-band 30W GaAs power FET. The performance of this FET than the existing 20w FET has been further improved, the synthesis of four in the tube shell using p-type impurity ion injection