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用射频磁控溅射法制备了Al-F共掺杂ZnO(ZnO(Al,F))透明导电薄膜,研究了不同退火气氛对ZnO(Al,F)薄膜的结构、电学和光学特性的影响。结果表明:在真空和还原性气氛中退火后的薄膜透光率呈现“蓝移”趋势,在空气中退火处理后的薄膜透光率则表现为“红移”;在真空中,400℃×60min的退火处理,使ZnO(Al,F)薄膜的电阻率降低至1.41×10~(-3)Ω·cm,透光率则上升到93%以上,有效提高了薄膜的光电特性;所有退火气氛下,薄膜均具有(002)单一择优取向的多晶六方纤锌矿结构;薄膜的晶粒尺寸为25～30nm。
The Al-F codoped ZnO (Al, F) transparent conductive films were prepared by radio-frequency magnetron sputtering. The effects of different annealing atmospheres on the structure, electrical and optical properties of ZnO (Al, F) . The results show that the transmittance of the film annealed in vacuum and reducing atmosphere shows a “blue shift” trend, and the film transmittance after annealing in air shows “red shift”; in vacuum , 400 ℃ × 60min annealing, the resistivity of ZnO (Al, F) thin film is reduced to 1.41 × 10 -3 Ω · cm, the light transmittance rises to above 93%, which effectively improves the photoelectric (002) polycrystalline hexagonal wurtzite structure with single preferred orientation under all annealed atmospheres. The grain size of the films is 25 ~ 30 nm.