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SOI——突破硅材料与硅集成电路限制的新技术与体硅材料和器件相比,SOI具有许多独特的优越性,例如高开关速度、高密度、抗辐照、无闩锁效应等,因而被称为21世纪的微电子技术而引起人们越来越多的关注.SOI技术正走向商业应用阶段,特别是应用于低压、低功耗CMOS电路,抗辐照器件和高温电子器件等.结合第9届SOI工艺和器件国际会议的内容,综述了SOI材料和器件的最新进展.(NO.8)国内X射线光刻技术研究进展
SOI - New Technology That Breaks Through Silicon and Silicon Integrated Circuits SOI offers many unique advantages over bulk silicon materials and devices, such as high switching speed, high density, resistance to radiation, and a latch-free effect, thus Known as 21st century microelectronics technology and cause more and more attention.SOI technology is moving to commercial application stage, especially for low voltage, low power CMOS circuits, anti-radiation devices and high temperature electronic devices. The 9th International Symposium on SOI Processes and Devices presents an overview of recent advances in SOI materials and devices. (NO.8) Progress in Research on X-ray Lithography in China