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重点研究了多级倍增超晶格InGaAs雪崩光电二级管(APD)的增益和过剩噪声,建立了新的载流子增益-过剩噪声模型。在常规弛豫空间理论基础上分析了其工作原理,考虑了预加热电场和能带阶跃带来的初始能量效应、电子进入高场倍增区时异质结边界附近的弛豫空间长度修正以及声子散射对碰撞离化系数的影响,提出了用于指导该类APD的增益-过剩噪声计算的修正弛豫空间理论。结果表明:在相同条件下,相比于常规的单层倍增SAGCM结构,多级倍增超晶格InGaAsAPD同时具有更高增益和更低噪声,且修正的弛豫空间理论可被推广到更多级倍增的超晶格InGaAsAPD结构,在保证低噪声前提下,通过增加倍增级数可提高增益。
The gain and excess noise of multi-level multiplication superlattice InGaAs avalanche photodiode (APD) are mainly studied, and a new carrier-gain-excess noise model is established. Based on the conventional relaxation space theory, its working principle is analyzed. The initial energy effect due to the pre-heating electric field and the energy band step is taken into account. The length of the relaxation space around the boundary of the heterojunction when the electron enters the high- Phonon scattering impact on the ionization coefficient of the impact, proposed to guide the APD gain-excess noise calculation of the modified relaxation space theory. The results show that the multi-level superlattice InGaAsAPD has higher gain and lower noise than the conventional single-layer double-walled SAGCM structure under the same conditions, and the modified relaxation space theory can be extended to more levels Doubled superlattice InGaAsAPD structure, under the premise of ensuring low noise, by increasing the multiplication order can increase the gain.