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最近几年里,由于IGCT具有较低的导通和开关损耗,它们已经成为中等电压电平用的电力半导体器件。两种损耗之间的折衷可以通过各种寿命控制技术调整。对这些器件日益增长的需求要求标准类型的元件来满足如静态电路断路器(低通态)、中压驱动(低开关损耗)这样的应用。另外,牵引(低工作温度)和电流型逆变器(对称阻断)方面的应用通常对半导体元件有相矛盾的要求。本文重点介绍用少量晶片和门极单元,同一系列的电力器件将如何满足这样的需求。解释了IGCT和IGBT之间的一些重要差异并讨论了器件发展的前景。
In recent years, due to their lower conduction and switching losses, IGCTs have become power semiconductor devices for medium voltage levels. The trade-off between the two losses can be adjusted by various life control techniques. The growing demand for these devices requires standard types of components to meet such applications as static circuit breakers (low-pass) and medium-voltage drive (low switching losses). In addition, traction (low operating temperature) and current mode inverters (symmetrical blocking) applications often have conflicting requirements on semiconductor components. This article focuses on using a small number of chips and gate units, the same series of power devices will be how to meet this demand. Explains some important differences between IGCTs and IGBTs and discusses the promise of device development.