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等离子浸没离子注入过程中,由于电路和负载的容性效应,使高压脉冲电源的输出电压前后沿较长,而高压脉冲的前后沿对离子能量的均匀性、注入深度及剂量分布都有很大影响。本文用硬管调制技术研制最高输出电压40 kV的脉冲电源,并通过一维PIC仿真方法,研究了脉冲后沿对注入离子能量的影响,并从理论上计算不同工艺参数下电源输出电能的利用率。对于前沿,当高压电子管一栅电压为200 V时,获得1μs的高压脉冲前沿时间。对于后沿,用多个IGBT开关串联释放高压脉冲关断后负载上存储的剩余电荷,获得较小的回复时间,实现了对高压脉冲拖尾时间控制。通过PSPICE仿真优化了脉冲后沿控制电路的驱动延迟时间和IGBT吸收电路的参数。
Due to the capacitive effect of the circuit and the load, the output voltage of the high-voltage pulse power supply is long in the front and back edges during the process of plasma immersion ion implantation. However, the front and back edges of the high-voltage pulse have great influence on the uniformity of ion energy, the implantation depth and the dose distribution influences. In this paper, a pulse power of 40 kV with the highest output voltage was developed by the technique of tube modulation. The influence of the pulse trailing edge on the energy of the implanted ions was studied by one-dimensional PIC simulation method. The utilization of the output power of the power source under different process parameters was theoretically calculated rate. For the leading edge, a high voltage pulse lead time of 1 μs is obtained when the gate voltage of the high voltage tube is 200 V. For the trailing edge, multiple IGBT switches are used to release the remaining charge stored in the load after the high-voltage pulse is turned off in series to obtain a smaller recovery time and achieve the control of the high-voltage pulse trailing time. The PSPICE simulation optimizes the driving delay time of the pulse trailing edge control circuit and the parameters of the IGBT absorption circuit.