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通过红外透射光谱研究了在光诱导退火中退火条件对氢化非晶硅薄膜的结构和光电特性的影响,实验所用样品采用热丝辅助微波电子回旋共振化学气相沉积方法制备。我们用桥键氢扩散模型来解释退火中的不同现象。样品的红外光谱在630和2000cm-1处的吸收系数有所增加,说明了原先的成键氢发生了移动和溢出,我们认为通过光诱导产生载流子的非辐射复合以及桥键氢和深俘获氢原子的交换,产生了大量的桥键氢原子,它们相互结合形成分子氢,氢溢出要优于氢团聚。
The effects of annealing conditions on the structure and photoelectric properties of hydrogenated amorphous silicon thin films were investigated by infrared transmission spectroscopy. The samples were prepared by hot filament assisted microwave electron cyclotron resonance chemical vapor deposition. We use bridged hydrogen diffusion models to explain the different phenomena in annealing. The increase of the absorption coefficient at 630 and 2000 cm-1 indicates that the original bonding hydrogen moves and overflows. We believe that the photo-induced non-radiative recombination of carriers and the bridging hydrogen and depth Trapping hydrogen atoms exchange, resulting in a large number of bridged hydrogen atoms, which combined with each other to form molecular hydrogen, hydrogen overflow is better than hydrogen agglomeration.