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利用热蒸发物理气相沉积法在300K的硅基底上制备了p型多晶PbSe薄膜,研究了氧敏化过程对其微观结构和电性能的影响。经XRD、XPS和SEM测试表明,制备的多晶PbSe薄膜为(200)晶面优先生长的面心立方结构,其经高温氧敏化后在微晶表面和晶界处形成了由SeO_2和PbO混合氧化物构成的氧化层新相,其微晶会在氧化反应和重结晶的作用下融结在一起,晶粒间间隙会随着退火温度的不断提升而逐渐变小。霍尔效应仪测量表明,常温下沉积的多晶PbSe薄膜为p型,氧敏化未改变其导电类型;随着氧敏化退火温度的增加,其载流子浓度降低,载流子迁移率和薄膜暗电阻不断增大,但实验发现氧敏化过程未提高p型PbSe薄膜的红外光敏性。
P-type polycrystalline PbSe thin films were deposited on a 300K silicon substrate by thermal evaporation physical vapor deposition. The effects of oxygen sensitization on the microstructure and electrical properties of the films were investigated. The results of XRD, XPS and SEM show that the prepared polycrystalline PbSe film is a face-centered cubic structure preferentially grown on the (200) crystal surface. After high temperature oxygen sensitization, the polycrystalline PbSe thin film is formed on the surface and at the grain boundaries by SeO 2 and PbO The new phase of the oxide layer composed of mixed oxides, the crystallites of them will be oxidized and re-crystallized together, and the intergranular gap will gradually become smaller as the annealing temperature increases. Hall effect measurements show that the polycrystalline PbSe films deposited at room temperature are p-type, and their sensitization does not change their conductivity type. With the increase of the oxygen-sensing annealing temperature, the carrier concentration decreases and the carrier mobility And the dark resistance of the film has been increasing. However, it was found that the oxygen sensitization did not improve the infrared photosensitivity of the p-type PbSe film.