一、会议组织机构指导单位:中国半导体行业协会承办单位:中国半导体行业协会分立器件分会专用集成电路重点实验室中国电子科技集团公司第十三研究所协办单位:合肥锐拓科技信息服务有限公司《半导体技术》编辑部《微纳电子技术》编辑部厦门创新众人会议服务有限公司二、征文范围1.宽禁带(Ga N、Si C等)外延材料的结构设计、制备与检测技术;2.功率器件用Ga As、In P外延材料的结构设计、制备与检测技术; I. Organizational Structure of the Conference Guiding Unit: China Semiconductor Industry Association Sponsor: Key Laboratory of ASIC for Discrete Devices Branch of China Semiconductor Industry Association The 13th Institute of China Electronics Technology Group Corporation Co-organizers: Hefei Rui Extension Technology Information Service Co., Ltd. “ Semiconductor Technology ”editorial department“ micro-nano electronic technology editorial department ”Xiamen innovation public meeting Services Co., Ltd. 2, essay scope 1 wide bandgap (Ga N, Si C, etc.) epitaxial material structure design, preparation and detection technology; Structure Design, Fabrication and Detection Technology of Ga As, In P Epitaxial Materials for Power Devices;