本文着重研究了多孔硅（ＰｏｒｏｕｓＳｉｌｉｃｏｎ，简称ＰＳ）在阴极偏压下过硫酸铵溶液中电压调制的电致发光（Ｅｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｃｅ，简称ＥＬ）现象．发现在定电压下，随极化时间的增长电致发光强度减小并伴随着光谱红移现象．通过红外、拉曼、ＡＦＭ及光电化学等手段对电致发光的淬灭机制进行了研究，结果表明，在电致发光过程中强氧化剂向多孔硅注入空穴使ＰＳ表面氧化，导致小粒径的硅晶逐渐被剥落，造成光谱高能部分首先淬灭并出现随时间变化的电致发光红移现象．这些结果支持量子限制效应在多孔硅液相电致发光中起着重要作用 This paper focuses on the electroluminescence (EL) phenomenon of PorousSilicon (PS) voltage-modulated in ammonium persulfate solution under cathodic bias. It is found that under constant voltage, the intensity of electroluminescence decreases with the increase of polarization time and is accompanied by the red shift of spectrum. The quenching mechanism of electroluminescence was studied by means of infrared, Raman, AFM and photoelectrochemistry. The results showed that strong oxidant injected holes into porous silicon to oxidize PS surface during electroluminescence, Of the silicon gradually peeled off, causing the high-energy part of the spectrum to first quench and appear red-shifted over time electroluminescence phenomenon. These results support the fact that quantum confinement plays an important role in the electrolysis of porous silicon liquid-phase electroluminescence