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本文给出了GaAs双栅场效应晶体管的高频等效电路模型以及输入/输出阻抗、跨导,单向增益、稳定因子等的解析表达式。在低频时,双栅场效应晶体管的增益高于单栅场效应晶体管,但是由于第二栅的电容分流效应,随着频率的增加双栅场效应晶体管的增益急速下降。我们研制了可用于K波段可变增益放大器中的双栅功率场效应晶体管,该器件总栅宽为1.2mm,在10GHz下,输出功率为1.1W,增益为10.5dB,附加功率效率为31％。同样栅宽的器件。在20GHz下,输出功率为340mW,增益为5.3dB。在K波段,动态增益控制范围可达45dB,在最初的增益控制变化10dB范围内,其插入相位变化不超过±2°。
In this paper, the high frequency equivalent circuit model of GaAs dual gate field effect transistor and the analytical expression of input / output impedance, transconductance, unidirectional gain and stability factor are given. At low frequencies, the gain of a dual gate field effect transistor is higher than that of a single gate field effect transistor, but the gain of the dual gate field effect transistor decreases rapidly with increasing frequency due to the capacitive shunt effect of the second gate. We have developed a dual-gate power field-effect transistor that can be used in a K-band variable gain amplifier with a total gate width of 1.2mm and an output power of 1.1W at 10GHz with a gain of 10.5dB and an additional power efficiency of 31% . The same width of the device. At 20GHz, the output power is 340mW with a gain of 5.3dB. In the K band, dynamic gain control range up to 45dB, in the first 10dB change in gain control range, the insertion phase change does not exceed ± 2 °.