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碰撞电离晶体管(IMOS)在高速、低功耗领域具有很好的应用前景。以优化传统IMOS的工作电压为目的,介绍了一种基于绝缘体上Ge的碰撞电离晶体管(GOI IMOS),利用Synopsys公司的ISE_TCAD对GOI IMOS的性能进行仿真分析与验证。结果表明,GOI IMOS相比于传统的绝缘体上Si的碰撞电离晶体管(SOI IMOS)可在更低的源漏偏压下工作,同时该器件能够实现大的开态电流与陡峭的亚阈值摆幅;另外,GOI IMOS的源漏偏压和栅长均对该器件阈值电压有较大的影响,p型GOI IMOS阈值电压的绝对值随着源漏电压和栅长的增大而减小。以上工作可为IMOS的设计、仿真、制备提供一定的理论指导。
Collision ionization transistor (IMOS) has good application prospects in the field of high speed and low power consumption. In order to optimize the operating voltage of traditional IMOS, a GO-based ionization transistor (GOI IMOS) based on insulator is introduced and the performance of GOI IMOS is simulated and verified by Synopsys ISE_TCAD. The results show that the GOI IMOS can operate at a lower source drain bias than conventional SOI IMOS and achieve high on-state current with steep subthreshold swing In addition, the source-drain bias voltage and the gate length of GOI IMOS all have a great influence on the threshold voltage of the device. The absolute value of the threshold voltage of the p-type GOI IMOS decreases with the increase of the source-drain voltage and the gate length. The above work can provide some theoretical guidance for the design, simulation and preparation of IMOS.