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一引言随着光纤通信技术的发展,发射波长λ=1.3μm光纤损耗小、色散低的光源制造已受到普遍重视。由于外延材料是器件制造的基础,因此如何确定和控制四元材料In_(1-x)Ga_xAs_yP_(1-y)的组分x、y,乃是制造发射波长λ=1.3μm光源的重要问题。四元材料In_(1-x)Ga_xAs_yP_(1-y)有二个自由度x、y,且其晶格常数和带隙(波长)是x,y的函数(服从Vegard定律),适当调整化学配比可使InGaAsP四元固溶体的带隙在1.35eV～0.74eV(对应波长λ=0.92～1.68μm)范围内变化,能得到与InP衬底相匹配的完整的外延
I. INTRODUCTION With the development of optical fiber communication technology, the manufacture of light source with low emission loss and low dispersion has been paid attention to. Since epitaxial material is the basis of device fabrication, how to determine and control the composition x, y of quaternary material In_ (1-x) Ga_xAs_yP_ (1-y) is an important issue to fabricate a light source with emission wavelength λ = 1.3μm. Quaternary material In_ (1-x) Ga_xAs_yP_ (1-y) has two degrees of freedom x, y, and its lattice constant and bandgap (wavelength) are functions of x and y (subject to Vegard’s law) The ratio can make the InGaAsP quaternary solid solution band gap 1.35eV ~ 0.74eV (corresponding to the wavelength λ = 0.92 ~ 1.68μm) within the range can be obtained with InP substrate matching complete epitaxial