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判断反应4In(液)+In_2O_3(固)=3In_2O(气)的自发性,并验证这一反应在指定条件(即860℃及2×10~(-4)乇氧分压)下没有发生或即使发生也可忽略。实验证明,反应2In(液)+1/2 O_2(气)=In_2O(气)在2×10~(-4)乇氧分压条件下是存在的。指出,这一反应是应用金属铟与氧化铟粉末混合物反应蒸发制备氧化铟透明导电薄膜的有效源区反应。此外还指出,在蒸发源区添加氧化铟粉末将减小蒸气物质的蒸发速率,不利于提高氧化铟薄膜的生长速率。
The spontaneity of the reaction 4In (liquid) + In 2 O 3 (solid) = 3In 2 O (gas) was judged and it was verified that this reaction did not occur under the specified conditions (that is, at 860 ° C and 2 × 10 -4 Torr partial pressure of oxygen) Can be ignored even if it happens. Experiments show that the reaction 2In (liquid) +1/2 O_2 (gas) = In_2O (gas) at 2 × 10 -4 Torr oxygen partial pressure conditions exist. It is pointed out that this reaction is an effective source region reaction for preparing indium oxide transparent conductive films by the reactive evaporation of a mixture of metal indium and indium oxide powders. In addition, it is also pointed out that adding indium oxide powder in the evaporation source region will reduce the evaporation rate of the vapor material, which is not conducive to increasing the growth rate of the indium oxide film.