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研究了具有45°内反射镜的0 98μm辐射波长的应变InGaAs/AlGaAs/GaAs单量子阱面发射半导体激光器结构,并采用MBE方法进行了材料制备。同时利用X射线双晶衍射,低温(10K)光致发光(PL)和电化学C V方法检测和分析了外延薄膜的光电和结构特性。在光致发光谱线中我们得到了发射波长0 919μm的谱峰,谱峰范围跨跃0 911～0 932μm,双晶回摆曲线、电化学C V分布曲线显示所设计的结构基本得到实现。
The structure of a strained InGaAs / AlGaAs / GaAs single quantum well surface emitting semiconductor laser with a wavelength of 988nm with a 45 ° internal mirror was studied and the material was prepared by MBE method. At the same time, the optoelectronic and structural properties of the epitaxial thin films were detected and analyzed by X-ray double crystal diffraction, low temperature (10K) photoluminescence (PL) and electrochemical C V methods. In the photoluminescence spectrum, we get the peak of the emission wavelength of 0 919μm, the peak of the spectrum crosses 0 911 ~ 0 932μm, the double swingback curve and the electrochemical C V distribution curve show that the designed structure has basically been realized.