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本文对ＳＩＭＯＸ／ＳＯＩ全耗尽Ｎ沟ＭＯＳＦＥＴ中单晶体管Ｌａｔｃｈ状态对器件性能的影响进行了实验研究．实验结果表明，短时间的Ｌａｔｃｈ条件下的电应力冲击便可使全耗尽器件特性产生明显蜕变．蜕变原因主要是Ｌａｔｃｈ期间大量热电子注入到背栅氧化层中形成了电子陷阱电荷（主要分布在漏端附近）所致．文章还对经过Ｌａｔｃｈ应力后，全耗尽ＳＯＩ器件在其他应力条件下的蜕变特性进行了分析．
In this paper, SIMOX / SOI fully depleted N-channel MOSFET Latch state of single-device performance of the experimental study. The experimental results show that the short-time Latch conditions of the impact of electrical stress can make the fully depleted device characteristics significantly degenerated. The main reason for the metamorphosis is that a large amount of hot electrons are injected into the back gate oxide layer during Latch to form electron trap charges (mainly distributed near the drain terminal). The article also analyzes the metamorphism of SOI devices under other stress conditions after Latch stress.