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本文利用高电子迁移率晶体管（ＨＥＭＴ）的直流输出分析模型，首次定量地分析了界面态对ＡｌＧａＡｓ／ＧａＡｓ ＨＥＭＴ 直流输出特性的影响．考虑界面态的作用，详细分析了不同界面态密度对ＨＥＭＴ的ＩＶ特性和器件跨导的影响．我们的研究结果表明随着界面态密度的增加，栅极电压对电流的控制能力减小，从而使器件的跨导减小．
In this paper, the influence of interface states on the DC output characteristics of AlGaAs / GaAs HEMTs is analyzed for the first time using the DC output analysis model of high electron mobility transistor (HEMT). Considering the effect of interface states, the influence of different interface states on I-V characteristics and device transconductance of HEMT is analyzed in detail. Our results show that as the interface state density increases, the gate voltage reduces the ability to control the current, thus reducing the transconductance of the device.