研究了 CMOS/ SOI 4 Kb静态随机存储器的抗总剂量辐照性能 .CMOS/ SOI 4 Kb静态随机存储器采用 1K×4的并行结构体系 ,其地址取数时间为 30 ns,芯片尺寸为 3.6 mm× 3.84 m m ;在工作电压为 3V时 ,CMOS/ SOI 4 Kb静态随机存储器抗总剂量高达 5× 10 5Rad(Si) ,能较好地满足军用和航天领域的要求 The total dose radiation resistance of a CMOS / SOI 4 Kb static random access memory is studied.The CMOS / SOI 4 Kb static random access memory (SRAM) uses a 1K × 4 parallel architecture system with an address fetch time of 30 ns and a chip size of 3.6 mm × 3.84 mm; at the operating voltage of 3V, CMOS / SOI 4 Kb static random access memory up to a total dose of 5 × 10 5Rad (Si), can better meet the military and aerospace requirements