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阻变存储器(RRAM)是一种新型的不挥发存储技术,研究阻变存储器阵列规模的存储性能以及可靠性问题是推进RRAM实用化的关键。目前通用的基于微控探针台的半导体参数分析的常规测量系统无法完成对阵列的自动化测试。利用半导体参数分析仪(4200-SCS)、开关矩阵以及相关外围电路搭建了一套针对阻变存储阵列的自动测试系统,实现了1Mbit RRAM芯片的初始阻态分布的读取、初始化测试、存储单元的自动化编程/擦除操作。测试结果表明,该测试系统可以实现阻变存储阵列的自动化测试,为进一步工艺参数和编程算法的优化设计奠定基础。
Resistive memory (RRAM) is a new non-volatile memory technology. Studying the storage performance and reliability of RRAM is the key to promote the practical use of RRAM. Conventional measurement systems based on the analysis of semiconductor parameters based on the microprobe station can not complete the automated testing of the array. A set of automatic test system for resistive switching memory array is constructed by using the semiconductor parameter analyzer (4200-SCS), the switch matrix and the related peripheral circuits. The initial resistive readout, initial test, memory cell Automated programming / erasing operation. The test results show that the test system can realize the automatic test of the resistive memory array, and lay a foundation for the further optimization of process parameters and programming algorithms.