N-type Si-based typeⅠ clathrates with different Ga content were synthesized by combining the solid-state reaction method,melting method and spark plasma sintering(SPS) method.The effects of Ga composition on high temperature thermoelectric transport properties were investigated.The results show that at room temperature,the carrier concentration decreases,while the carrier mobility increases slightly with increasing Ga content.The Seebeck coefficient increases with increasing Ga content.Among all the samples,Ba7.93Ga17.13Si28.72 exhibits higher Seebeck coefficient than the others and reaches 135 μV·K-1 at 1000 K.The sample prepared by this method exhibits very high electrical conductivity,and reaches 1.95×105 S·m-1 for Ba8.01Ga16.61Si28.93 at room temperature.The thermal conductivity of all samples is almost temperature independent in the temperature range of 300-1000 K,indicating the behaviour of a typical metal.The maximum ZT value of 0.75 is obtained at 1000 K for the compound Ba7.93Ga17.13Si28.72. N-type Si-based type I clathrates with different Ga content were synthesized by combining the solid-state reaction method, melting method and spark plasma sintering (SPS) method. The effects of Ga composition on high temperature thermoelectric transport properties were investigated. show that at room temperature, the carrier concentration decreases, while the carrier mobility increases slightly with increasing Ga content. Seebeck coefficient increases with increasing Ga content. Among all the samples, Ba7.93Ga17.13Si28.72 exhibits higher Seebeck coefficient than the others and reaches 135 μV · K-1 at 1000 K. The sample prepared by this method exhibits very high electrical conductivity, and reaches 1.95 × 10 5 S · m -1 for Ba 8.01 Ga 16.61 Si 28.93 at room temperature. The thermal conductivity of all samples is almost temperature independent in the temperature range of 300-1000 K, indicating the behavior of a typical metal. The maximum ZT value of 0.75 is obtained at 1000 K for the compound Ba7.93Ga17.13Si28.72.