研究了一种采用新的T型发射极技术的自对准InP/GaInAs单异质结双极晶体管.采用了U型发射极图形结构、选择性湿法腐蚀、LEU以及空气桥等技术,成功制作了U型发射极尺寸为2μm×12μm的器件.该器件的共射直流增益达到170,残余电压约为0·2V,膝点电压仅为0·5V,而击穿电压超过了2V.器件的截止频率达到85GHz ,最大振荡频率为72GHz ,这些特性使此类器件更适合于低压、低功耗及高频方面的应用. A self-aligned InP / GaInAs single heterojunction bipolar transistor with a new T-emitter technology was studied. The U-emitter pattern structure, selective wet etching, LEU and air bridge were successfully used A device with a U-shaped emitter of 2μm × 12μm has been fabricated with a common-mode DC gain of 170, a residual voltage of about 0.2V, a knee voltage of only 0 · 5V and a breakdown voltage of over 2V. The cutoff frequency of 85GHz, the maximum oscillation frequency of 72GHz, these features make these devices more suitable for low voltage, low power consumption and high frequency applications.