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利用溶胶凝胶法在MgO(001)衬底上获得C轴择优取向的铁电铌酸锶钡(SBN)薄膜,主要介绍MgO(001)衬底上SBN60薄膜及掺入的K离子与Nb离子摩尔比例为1∶3的SBN60薄膜横向电光系数r51的测量,实验测得不掺K的SBN60薄膜r51值为37.6 pm/V,掺K的r51值为58.5 pm/V。并由此设计一种基于MgO(001)衬底上的马赫曾德尔型SBN60薄膜波导调制器,计算出在633 nm时,掺K比例为1∶3的此种波导调制器半波调制电压值为10 V,不掺K的半波电压值为16 V,结果说明掺入K离子能增加薄膜的横向电光系数并有效的减少波导的半波调制电压。
The ferroelectric strontium barium niobate (SBN) thin film with a preferred C-axis orientation was obtained on a MgO (001) substrate by sol-gel method. The SBN films on MgO (001) substrate and the incorporation of K ions and Nb ions The results show that the r51 value of SBN60 film without K doping is 37.6 pm / V, and the r 51 value of doping K is 58.5 pm / V. Based on this, a Mach-Zehnder SBN60 thin film waveguide modulator based on MgO (001) substrate was designed to calculate the half-wave modulation voltage of this waveguide modulator with a K ratio of 1: 3 at 633 nm Is 10 V. The half-wave voltage without K doping is 16 V. The results show that K-doping can increase the transverse electro-optic coefficient of the film and reduce the half-wave modulation voltage of the waveguide effectively.