采用碳化硅4H/6H多型纳米线制备单电子晶体管,在室温下观察到库仑阻塞效应和负微分电阻,I-V曲线呈现典型的库仑台阶,其台阶为周期性的,这些周期性小台阶,又呈现非周期的嵌套结构。单根纳米线碳化硅由4H/6H多型交替生长构成,它们嵌合构成竹节状生长,碳化硅多型结构中4H多型晶体构成双势垒,其直径为10~80nm,长度约50nm。而联结4H多型的6H多型晶体部分,长度约20nm,且直径较细(约10~35nm),被认为是库仑孤岛。 Single-electron transistors were fabricated using 4H / 6H multi-type silicon carbide nanowires. Coulomb blocking and negative differential resistance were observed at room temperature. IV curves showed typical Coulomb steps with periodic steps. These periodic small steps A non-periodic nested structure. The single nanowire silicon carbide is composed of 4H / 6H multi-type alternating growth, which are chimeric to form bamboo-like growth. The 4H multi-type crystal in the multi-type silicon carbide structure forms a double potential barrier with a diameter of 10-80 nm and a length of about 50 nm . The 4H polytype 6H polytype crystal part, which is about 20 nm in length and smaller in diameter (about 10-35 nm), is considered a Coulomb island.