采用金属有机化合物化学气相沉积(MOCVD)方法制备了不同AlN隔离层厚度的AlGaN/AlN/GaN结构的高电子迁移率晶体管(HEMT)材料。研究了AlN隔离层对HEMT材料电学特性的影响。AlN隔离层厚度约为1.5nm的HEMT材料,二维电子气浓度和迁移率分别达到1.2×1013 cm-2和1680cm2/Vs、方块电阻低至310Ω,体现了HEMT材料良好的电学性能。原子力显微镜和高分辨X射线衍射测试结果显示HEMT材料具有较好的表面形貌和异质结界面,较好的异质结界面也有利于增强HEMT材料的二维电子气浓度和迁移率。 A high electron mobility transistor (HEMT) material with AlGaN / AlN / GaN structure with different AlN isolation layer thickness was prepared by metal organic chemical vapor deposition (MOCVD). The effect of AlN isolation layer on the electrical properties of HEMT materials was investigated. AlN insulator layer thickness of about 1.5nm HEMT material, the two-dimensional electron gas concentration and mobility were 1.2 × 1013 cm-2 and 1680cm2 / Vs, the sheet resistance as low as 310Ω, reflecting the HEMT material good electrical properties. Atomic force microscopy and high resolution X-ray diffraction test results show that the HEMT material has a good surface morphology and heterojunction interface, a better heterojunction interface is also conducive to enhancing the HEMT material two-dimensional electron gas concentration and mobility.