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为了进一步提高非晶硅太阳电池的光-电转换效率,必须对太阳的全光谱进行有效的吸收,因而就必须获得光学带隙(Eopt)可调制的非晶薄膜材料,即要制备出Eopt比a-Si:H(1.8eV)大的和小的(称窄带隙材料)薄膜材料,以使它有效地吸收太阳光谱中的短波和长波部分;亦即需要将“单层”太阳电池(pin-a-Si:H)改进为“多层”或称为“叠层”太阳电池。在这一方面已有a一Si:H/a-SiGe:H叠层电池,共效率η>13％。我们将N和H掺入a-Ge中,可获得窄带隙a-GeNx:H光电薄膜材料,试图改进非晶硅太阳电池的效率。
In order to further improve the light-to-electricity conversion efficiency of amorphous silicon solar cells, the entire spectrum of the sun must be effectively absorbed, and thus it is necessary to obtain an optical thin film material (Eopt) that can be modulated, that is, to prepare an Eopt ratio a-Si: H (1.8 eV) large and small (called narrow bandgap material) thin film material so that it efficiently absorbs the short and long-wave portions of the solar spectrum; that is, the “single” solar cell -a-Si: H) to “multiple layers” or “stacked” solar cells. In this regard, there has been a Si: H / a-SiGe: H stack battery with a total efficiency of η> 13%. We incorporate N and H into a-Ge to obtain narrow-bandgap a-GeNx: H photovoltaic thin film materials in an attempt to improve the efficiency of amorphous silicon solar cells.