Au掺杂碲镉汞气相外延生长及电学性能

来源 :红外与毫米波学报 | 被引量 : 0次 | 上传用户：ARCHERY6805068

【摘要】

：

采用气相外延技术生长Au掺杂的Hg1-xCdxTe薄膜材料,利用范德堡法对薄膜材料进行电学性能表征.通过变温霍尔测量,分析了常规Au掺杂p型薄膜的霍尔系数和霍尔迁移率随温度的变化

【作者】

：

王仍焦翠灵徐国庆张莉萍张可锋陆液杜云辰邵秀华

【机构】

：

中国科学院上海技术物理研究所红外成像材料与器件重点实验室

【出处】

：

红外与毫米波学报

【发表日期】

：

2004年期

【关键词】

：

Hg1-xCdxTe晶体磁输运迁移率谱二次离子质谱 Hg1-xCdxTe crystal magneto-transport mobility spect

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论文部分内容阅读

采用气相外延技术生长Au掺杂的Hg1-xCdxTe薄膜材料,利用范德堡法对薄膜材料进行电学性能表征.通过变温霍尔测量,分析了常规Au掺杂p型薄膜的霍尔系数和霍尔迁移率随温度的变化,利用二次离子质谱(SIMS)分析薄膜中Au的纵向分布趋势.讨论了三种反常p型薄膜的霍尔系数和霍尔迁移率随温度的变化.通过变磁场霍尔测量,分析了具有反型层Hg1-xCdxTe薄膜的迁移率谱,证实了由于表面电子、体电子以及体空穴混合导电造成的反常霍尔性能.

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Au掺杂碲镉汞气相外延生长及电学性能

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