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研究了在垂直结构发光二极管(VLED)器件中,光致电化学法(PEC)刻蚀N极性n-Ga N的速率受不同刻蚀条件(刻蚀浓度、刻蚀时间和光照强度)的影响.并选择N极性n-Ga N表面含有较理想六角金字塔结构(侧壁角为31°)的样品制成器件,研究PEC刻蚀对VLED的欧姆接触和光电性能的影响.结果表明,与未粗化样品相比,PEC刻蚀后的样品接触电阻率明显降低,形成更好的欧姆接触;其电学特性有较好的改善,光输出功率有明显提高,在20 m A电流下光输出功率增强了86.1%.对不同金字塔侧壁角度的光提取效率用时域有限差分法(FDTD)模拟,结果显示光提取效率在侧壁角度为20°—40°有显著提高,在23.6°(Ga N-空气界面的全反射角)时达到最大.
The effect of photoelectrochemical method (PEC) etching rate of n-polar n-Ga N was investigated under different etching conditions (etching concentration, etching time and light intensity) in vertical structured light-emitting diode (VLED) The influence of PEC etching on the ohmic contact and the photoelectric properties of VLED was also investigated by choosing a sample preparation device with an ideal hexagonal pyramid structure (sidewall angle of 31 °) on the n-type n-Ga N surface. The results show that Compared with the non-roughened samples, the contact resistivity of the PEC-etched samples significantly decreased to form better ohmic contact; the electrical properties of the samples were significantly improved and the light output power was significantly improved. The light output at 20 mA current Power increased by 86.1% .The FDTD simulation of the light extraction efficiency of different pyramid sidewall angles showed that the light extraction efficiency increased significantly at the sidewall angle of 20 ° -40 °, at 23.6 ° (Ga N-air interface total reflection angle) to reach the maximum.