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采用MBE生长In0 .3 Ga0 .7As/GaAs和GaInNAs/GaAs量子阱为有源区的器件结构材料 ,制备出工作在10 60nm及 1310nm波段的谐振腔增强型光电探测器 .对谐振腔增强型光电探测器的空间角度相关特性进行了实验与物理分析 ,改变光束入射角度 ,器件谐振接收波长可在大范围调变
MBE growth of In0 .3 Ga0 .7As / GaAs and GaInNAs / GaAs quantum wells as the active region of the device structure materials, work in the 1060nm and 1310nm band resonant cavity enhanced photodetector. Resonator enhanced photoelectric Detector space angle related characteristics of the experimental and physical analysis, change the beam incident angle, the device resonant receive wavelength modulation in a wide range