【摘 要】
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Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputter
【机 构】
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School of Electronic Information Engineering
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Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then Processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3h, its phase transition temperature is 56℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.
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