系统分析了利用超高真空CVD技术在Si衬底上外延Si1-xGex 合金的体内组分分布情况和Ge的表面偏析现象。用SIMS对Si和Ge的组分作了深度剖析。在生长过程中 ,组分均匀 ,在表面Ge浓度减小 ,Si浓度没有明显变化。在不经HF酸清洗和在HF酸中去掉表面自然氧化层的两种情况下 ,用XPS分别对外延层表面进行了定量分析 ,得到Ge的表面偏析与表面自然氧化相关的结论 The in-vivo composition distribution of Si1-xGex alloy and the surface segregation of Ge on Si substrate by ultra-high vacuum CVD were systematically analyzed. In-depth profile of Si and Ge components with SIMS. In the growth process, the components were uniform, the surface Ge concentration decreased, there was no significant change in Si concentration. In both cases, the surface of the epitaxial layer was quantitatively analyzed by XPS in the absence of HF acid cleaning and the removal of surface native oxide in HF acid, respectively. The results showed that the surface segregation of Ge was related to the natural surface oxidation