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本文提出了一种基于U形波导耦合单微环结构的新型SOI(绝缘体上硅)温度传感器.温度变化引起感温部位有效折射率和长度变化,导致传感器的输出光谱发生漂移.根据传输矩阵法和耦合模理论,设计了新型传感器模型,并且分析了感温部位不同时系统输出光谱特性.结果表明:当U形波导耦合单微环整体结构感温时,输出光谱无伪模,消光比达到31 dB,可作为最佳感温元件.相比于传统的双直波导耦合单微环结构,当U形波导的两个耦合点间的距离为微环周长的整数倍数时,FSR(自由光谱范围)可加倍至56 nm,灵敏度提高到89.2 pm/?C,测量范围为298—720 K,实现了SOI微环谐振器的高温测量.
In this paper, a new type of SOI (silicon on insulator) temperature sensor based on a U-shaped waveguide coupling single micro-ring structure is proposed. The temperature change causes the effective refractive index and length of the temperature sensing part to change, resulting in the drift of the output spectrum of the sensor. According to the transfer matrix method And coupled-mode theory, a new sensor model was designed and the output spectral characteristics of the system were analyzed at different temperature. The results show that when U-shaped waveguides are coupled to form a single micro-ring, the output spectrum has no pseudo-mode and the extinction ratio reaches 31 dB, can be used as the best temperature sensing element.Compared with the traditional dual-waveguide coupled single-micro-ring structure, when the distance between the two coupling points of the U-shaped waveguide is an integral multiple of the circumference of the microring, the FSR Spectral range) can be doubled to 56 nm, the sensitivity increased to 89.2 pm /? C, the measurement range of 298-720 K, to achieve SOI micro-ring resonator temperature measurement.